r07ds0133ej0500 rev.5.00 page 1 of 8 sep 10, 2010 preliminary datasheet cr08as-12 thyristor low power use features ? i t (av) : 0.8 a ? v drm : 600 v ? i gt : 100 ? a ? non-insulated type ? glass passivation type ? surface mounted type outline renesas package code: plzz 000 4 c a-a ( package name: u pak ) 2 4 1 3 renesas package code: plzz0004cb-a ( package name: sot-8 2 4 1 3 2, 4 1 3 1. cathode 2. anode 3. gate 4. anode eol pkg de: e: p p ot-89 t-89 ) 4 4 ol ol ol ol ol p ol applications solid state relay, strobe flas her, igniter, and hybrid ic maximum ratings voltage class parameter symbol 12 (mark af) unit repetitive peak reverse voltage v rrm 600 v non-repetitive peak reverse voltage v rsm 720 v dc reverse voltage v r (dc) 480 v repetitive peak off-state voltage note1 v drm 600 v dc off-state voltage note1 v d (dc) 480 v parameter symbol ratings unit conditions rms on-state current i t (rms) 1.26 a average on-state current i t (av) 0.8 a commercial frequency, sine half wave 180 conduction, ta = 51c note2 surge on-state current i tsm 10 a 60hz sine half wave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.42 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 0.5 w average gate power dissipation p g (av) 0.1 w peak gate forward voltage v fgm 6 v peak gate reverse voltage v rgm 6 v peak gate forward current i fgm 0.3 a junction temperature tj ? 40 to +125 c storage temperature tstg ? 40 to +125 c mass ? 50 mg typical value notes: 1. with gate to cathode resistance r gk = 1 k ? . r07ds0133ej0500 (previous: rej03g0349-0400) rev.5.00 sep 10, 2010
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 2 of 8 sep 10, 2010 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak reverse current i rrm ? ? 0.5 ma tj = 125c, v rrm applied, r gk = 1 k ? repetitive peak off-state current i drm ? ? 0.5 ma tj = 125c, v drm applied, r gk = 1 k ? on-state voltage v tm ? ? 1.5 v ta = 25c, i tm = 2.5 a, instantaneous value gate trigger voltage v gt ? ? 0.8 v tj = 25c, v d = 6 v, i t = 0.1 a note4 gate non-trigger voltage v gd 0.2 ? ? v tj = 125c, v d = 1/2 v drm , r gk = 1 k ? gate trigger current i gt 1 note3 ? 100 note3 ? a tj = 25c, v d = 6 v, i t = 0.1 a note4 holding current i h ? 1.5 3 ma tj = 25c, v d = 12 v, r gk = 1 k ? thermal resistance r th (j-a) ? ? 65 c/w junction to ambient note2 notes: 2. soldering with ceramic plate (25 mm ? 25 mm ? t0.7 mm). 3. if special values of i gt are required, choose item e from those listed in the table below if possible. item b e i gt ( ? a) 20 to 50 20 to 100 the above values do not include the current flowing through the 1 k ? resistance between the gate and cathode. 4. i gt , v gt measurement circuit. 3v dc i gs i gt 6v dc 60 v gt 2 1 t ut 1 k r gk a 3 a2 v1 a1 s witc h switch 1 : i gt measurement switch 2 : v gt measurement (inner r esistance of voltage meter is about 1k)
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 3 of 8 sep 10, 2010 performance curves maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) maximum transient thermal impedance characteristics (junction to ambient) transient t herma l impedance (c/w) time (s) gate trigger voltage vs. junction temperature gate trigger voltage (v) junction temperature (c) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature (c) gate characteristics 100 (%) gate trigger current (tj = tc) gate trigger current (tj = 25c) 10 0 23 57 10 1 4 2 23 57 10 2 44 6 8 10 3 1 5 7 9 0 5 01 4 23 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 10 2 10 ?2 10 0 10 1 7 5 3 2 10 ?1 7 5 3 2 10 0 7 5 3 2 7 5 3 2 10 ?2 23 57 23 57 10 1 23 57 10 2 23 57 23 10 ?1 v gt = 0.8v i gt = 100a (tj = 25c) p gm = 0.5w v gd = 0.2v i fgm = 0.3a 160 60 ?20 ?4 0020 4 0 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 1.0 0.8 0.7 0.6 0.3 0.4 0.1 0 120 ?40 ? 20 20 80 0.2 0.5 0.9 0 60 40 100 23 10 0 57 10 1 23 57 10 2 23 57 10 3 10 1 23 10 ?3 57 10 ?2 23 57 10 ?1 23 57 10 0 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 ta = 25c p g(av) = 0.1w typical example distribution typical example 25 25 t0.7 aluminum board v fgm = 6v
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 4 of 8 sep 10, 2010 maximum average power dissipation (single-phase half wave) average power dissipation (w) average on-state current (a) average on-state current (a) average on-state current (a) allowa ble ambient temperature vs. average on-state current (single-phase full wave) allowa ble ambient temperature vs. average on-state current (single-phase half wave) allowa ble ambient temperature vs. average on-state current (single-phase half wave) ambient temperature (c) ambient temperature (c) ambient temperature (c) average on-state current (a) average on-state current (a) maximum average power dissipation (rectangular wave) maximum average power dissipation (single-phase full wave) average power dissipation (w) average power dissipation (w) average on-state current (a) 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0 .4 0.81 .21 .4 0.20 .6 1.0 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 1.6 0 0 .4 0.81 .21 .4 0.20 .6 1.0 = 30 60 120 90 180 160 120 60 40 20 140 100 80 0 0.8 0 0.20 .4 0.6 0.7 0.10 .3 0.5 65c/w 90c/w r th(j?a) = 200c/w 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.81 .21 .4 0.20 .6 1.0 = 30 60 120 90 180 1.6 1.2 0.6 0.4 0.2 1.4 1.0 0.8 0 1.6 0 0.4 0.81 .21 .4 0.20 .6 1.0 = 30 60 120 90 180 270 dc 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.81 .21 .4 0.20 .6 1.0 = 30 120 90 180 60 360 resistive, inductive loads 25 25 t0.7 aluminum board 25 25 t0.7 aluminum board 360 resistive, inductive loads natural convection 360 resistive, inductive loads natural convection = 180 360 resistive loads 360 resistive loads natural convection 360 resistive, inductive loads
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 5 of 8 sep 10, 2010 breakover voltage vs. gate to cathode resistance gate to cathode resistance (k) 100 (%) breakover voltage (r gk = rk) breakover voltage (r gk = 1k) breakover voltage vs. junction t emperature junction t emperature (c) 100 (%) breakover voltage (tj = tc) breakover voltage (tj = 25c) holding c urrent vs. junction temperature holding c urrent (ma) junction t emperature (c) holding c urrent vs. gate to cathode resistance gate to cathode resistance (k) 100 (%) holding c urrent (r gk = rk) holding c urrent (r gk = 1k) breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/s) 100 (%) breakover voltage (dv/dt = vv/s) breakover voltage (dv/dt = 1v/s) 160 120 60 40 20 140 100 80 0 160 ?40 0 4 0801201 40 ? 20 20 60 100 allowable ambient temperature vs. average on-state current (rectang ular wave) ambient temperature (c) average on-state current (a) 160 120 60 40 20 140 100 80 0 1.6 0 0.4 0.81 .21 .4 0.20 .6 1.0 dc = 30 120 180 270 60 90 25 25 t0.7 aluminum board 360 resistive, inductive loads natural convection 23 10 ?1 57 10 0 23 57 10 1 23 57 10 2 0 80 100 120 40 60 20 23 10 0 57 10 1 23 57 10 2 23 57 10 3 160 0 80 100 120 140 40 60 20 23 10 ?1 57 10 0 23 57 10 1 23 57 10 2 500 0 300 400 100 200 60 ?20 ?40 ?60 020 4 0 80 100 120 140 10 1 7 5 3 2 10 0 7 5 3 2 10 ?1 7 5 3 2 10 ?2 # 1 typical example r gk = 1k typical example tj = 125c tj = 125c r gk = 1k typical example r gk = 1k i gt (25 c) = 35a typical example distribution tj = 25c typical example i gt (25 c) i h (1k) 25a0 .9ma # 1
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 6 of 8 sep 10, 2010 holding current vs. gate trigger current holding current (ma) gate trigger current (a) 4.0 0 2.0 2.5 3.0 3.5 1.0 1.5 0.5 10 0 23 10 ?1 57 10 0 23 57 10 1 23 57 10 2 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ?1 40 30 15 10 5 35 25 20 0 160 0 4 0801201 40 20 6 0100 160 120 100 40 60 20 0 160 ?40 ? 20 20 80 140 120 80 140 0 60 40 100 thermal impedance vs. board dimensions thermal resistance (c/w) board dimensions (mm) regular square one side 320 240 120 80 40 280 200 160 0 80 0 20 40 60 70 10 30 50 without epoxy plate 10 10 epoxy plate with copper foil 10 2 10 0 10 1 2 4 3 57 10 2 2 4 3 57 10 0 10 1 23 57 10 2 23 5 7 10 4 7 5 3 2 10 3 7 5 3 2 7 5 3 2 10 1 # 1 # 2 tj = 25c typical exampl e turn-on time vs. gate current turn-on time (s) gate current (ma) turn-off time vs. junction temperature turn-off time (s) junction temperature (c) gate trigger current vs. gate current pulse width 100 (%) gate trigger current (tw) gate trigger current (dc) junction temperature (c) 100 ( % ) rep eti t ive peak rev e rse vo l tage ( tj = t c) rep eti t ive peak rev e rse vo l tage ( tj = 2 5c) gate current pulse width (s) repetitive peak reverse v oltage vs. junction temperature typical example v d = 100v r l = 47 r gk = 1k ta = 25c typical example distribu tion v d = 50v, v r = 50v i t = 2a, r gk = 1k tj = 25c typical example i gt (dc) 10a 65a # 1 # 2 t0.7 aluminum board
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 7 of 8 sep 10, 2010 package dimensions 4.5 0.1 1.8 max 1.5 0.1 0.44 max 0.44 max 0.48 max 0.53 max 1.5 1.5 3.0 2.5 0.1 4.25 max 0.8 min 1 0.4 (1.5) (2.5) (0.4) (0.2) previous code plzz0004ca- aupa k / upakv mass[typ.] 0.050g sc-62 renesas code jeita package code unit: mm package name upak sc -62 0 .4 8g ma ss [typ. ] ? p lzz0004 c b-a rene s a s c ode jeita package c ode previous c ode unit: mm 4.6max 0.48max 0.58max 3.0 1.5 4.2ma 2.5 1.6 0.2 0.4 +0.03 ?0.05 p acka g e name so t- 89 eol pkg l p ol ol l ol ol l l ol l ol l l l k k k pk p p p pk pk pk pk p p p p o ol o o o o k kg pk k k ol ol ol ol l l l l l l o k k k k k k o o o o o o max 0 . 8 min n 5 5 0 .1 0.1 1 .5 1.5 0 . 1 0.1
cr08as-12 preliminary r07ds0133ej0500 rev.5.00 page 8 of 8 sep 10, 2010 order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 4000 type name ? et +direction (1 or 2) +4 cr08as-12-et14 note : please confirm the specificat ion about the shipping in detail.
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